Transparent Al0.016In0.003Zn0.981O (AIZO)/Bi2Mg2/3Nb4/3O7 (BMN)/AIZO capacitors were prepared using BMN films grown from 25 to 250 degrees C on AIZO/glass substrates (Corning 1737) by pulsed laser deposition. The BMN films grown at 250 degrees C on the AIZO electrode exhibit a stable interface state between BMN and AIZO electrodes and the lowest root mean square roughness of 1 nm. The Pt/200 nm thick BMN/200 nm thick AIZO capacitors show dielectric constants of 50-68, dielectric losses of 2-3%, and leakage current densities of similar to 4 x 10(-8) A/cm(2) at 200 kV/cm in the range of growth temperatures. The AIZO/BMN/AIZO capacitors exhibit irregular variations in transmittance in the visible range and an optical transmittance of approximately 94% at a wavelength of 550 nm. Transparent AIZO/BMN/AIZO capacitors are possible candidates for integration with the transparent solar cells for the transparent system applications. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3212836] All rights reserved.