A single phase of CuIn1-xGaxSe2 (CIGS) polycrystalline thin films was successfully fabricated by the pulse-reverse electrodeposition technique. In this study, a multipulse sequence of potentials with varying amplitude and duration time was used to fabricate CIGS thin film, in which the electrolyte was composed of CuCl2, InCl3, GaCl3, SeO2, Na-citric, and LiCl. Then these as-deposited films were annealed in argon atmosphere. The crystalline structure of the thin film was characterized by X-ray diffractometer. The results revealed that thin films fabricated by the pulse-reverse electrodeposition technique only produced a chalcopyrite structure, with no occurrence of Cu2-xSe secondary phases. The identification of Cu2-xSe secondary microcrystalline phases and vibration modes of chalcopyrite and Cu2-xSe was used by a micro-Raman spectrum. The morphological features were characterized by scanning electron microscopy, which showed that the films were dense and smooth compared with that fabricated by a one-step electrodeposition technique without a multipulse step. The thickness and roughness of the CIGS thin films were estimated by an Alpha-Step profilometer. Finally, the carrier type of the CIGS thin film is of a p-type nature as confirmed by electrochemical measurement. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3240330] All rights reserved.