삼염화실란 정제공정에서의 분리벽형 증류탑 적용

홍승택; 이문용; Seungtaek Hong; Moonyong Lee

Clean Technology, Vol.16, No.1, 64-70, March, 2010

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삼염화실란 정제공정에서의 분리벽형 증류탑 적용

Application of a Divided-Wall Column for the Trichlorosilane Refining Process

홍승택, 이문용 ^†

영남대학교 디스플레이화학공학부, 712-749 경북 경산시 대동 214-1

Seungtaek Hong, and Moonyong Lee^†

School of Display and Chemical Engineering, Yeungnam University, 214-1 Dae-dong, Gyeongsan, Gyeongbuk 712-749, Korea

E-mail:

초록

본 연구에서는 상용 폴리실리콘 제조공정 중 삼염화실란 정제공정에 사용되는 증류탑에 대해 분리벽형 증류탑을 적용하는 방안을 제안하였다. 상용 전산모사 프로그램(HYSYS)을 통해 기존의 단순 증류탑을 사용한 정제공정과 분리벽형 증류탑으로 대체한 공정을 각각 전산모사 하여 같은 순도와 수율로 삼염화실리콘을 정제할 때 증류탑에서 소모되는 에너지와 투자비용 효과를 비교 분석하였다. 그 결과, 분리벽형 증류탑을 적용한 정제공정이 기존 정제공정에 비해 약 61%의 에너지 절감 효과와 58%의 투자비용 절감효과를 가지는 것으로 확인되었다.

In this study, we suggest the application of the divided-wall column (DWC) to the existing trichlorosilane(TCS) purification process in the commercial polysilicon manufacturing process. Using Aspen HYSYS V7.1, an extensive simulation study was carried out for the analysis of the energy consumptions and capital cost for the conventional sequential distillation configuration and the DWC for producing a given purity and yield of trichlorosilane. As a result, it is shown that the DWC saves the separation energy by 61% and the equipment cost by 58% compared with the conventional distillation process.

Keywords:Trichlorosilane;Refining process;Distillation process;Divided-wall column

[References]

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[Related Articles]

[1] http://www.energyblueprint.info/resources.0.html

[2] Petlyuk FB, Platonov VM, Slavinskii DM, Int. Chem. Eng., 5, 555 (1965)

[3] Electronic Parts & Components, 2007, No. 11, pp. 36.

[4] Handbook of Photovoltaic Science and Engineering, John Wiley & Sons, Ltd, 2003, pp. 153-204.

[5] Hirosi K, Kumi O, Sci. Technol. Trends, 24, 38 (2007)

[6] Uda H, Abang AE, Ibrahim A, Chiang Mai J. Sci, 34, 47 (2007)

[7] Kloepfer H, US Patent No. 3,500,613 (1970)

[8] Union Carbide, "Low Cost Solar Array Project. Feasibility of the Silane Process for Producing Semiconductor-Grade Silicon", Final Report, Oct 1975-Mar 1979, JPL Contract 954, 334, Jun (1979)

[9] Massimiliano E, Giuseppe T, Ben-Guang R, Daniele D, Ilkka T, Chem. Eng. Res. Des., 87, 1649 (2009)

[10] Fang CS et al., "Process Feasibility Study in Support of Silicon Material Task I. Quarterly Technical Progress Report (Ⅷ)", Lamar University, Chemical Engineering Department (1978)

[11] Drews MA, Boggs BE, Digges Jr. TG, Yaws CL, "High Purity Silicon Manufacturing Facility", Texas Instruments Inc Dallas, Final Technical Report 1, Jul., 69-31 (1971)

[12] Gribov BG, Zinov’'ev KV, Inorg. Mater., 39, 653 (2003)

[13] Gribov BG, Zinov’'ev KV, Rare Metals, 28, 221 (2009)

[14] Coso G, del, Zamorano JC, Caniizo C, del, Lelievre JF, Hofstetter J, Luque A, Proceedings of the 2009 Spanish Conference on Electron Devices, 360-363 (2009)

[15] Lee SH, Lee MY, Korean Chem. Eng. Res., 45(1), 39 (2007)

[16] Systematic Methods of Chemical Process Design, Prentice Hall, 2003, pp 110-141.