Scandia-stabilized zirconia (SSZ) thin films, similar to 400 nm thick, were deposited on sapphire substrate by a pulsed-laser deposition (PLD) method. Their structural and transport properties were studied by means of X-ray diffraction and electrical conductivity measurements. The in-plane conductivities of thin films were measured and compared to that of the bulk sample. Although the decrease in ionic conductivity near phase transition temperature (550 degrees C) was still shown in the case of the 10SSZ film, the conductivity drop was much smaller and less abrupt compared to that of bulk samples. With 1 mol% Y2O3 or CeO2 doping, the conductivity curves became linear. However, the conductivity was reduced from that of the undoped 10SSZ film. (c) 2008 Elsevier B.V. All rights reserved.