This paper first discusses laser crystallization of silicon (Si) films with a carbon optical absorption layer, which makes it possible to use an infrared laser light. Then we discuss heat treatment with high-pressure H2O vapor for defect reduction of laser crystallized Si films and their interface for fabrication of high performance Si thin film transistors (TFTs). Finally, we present a method of transfer process of electrical circuits from original glass substrates to foreign plastic films, developed with GeO2 removing layer. (c) 2007 Elsevier Ltd. All rights reserved.