4H-SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25 mu m which reduces the carrier recombination in the base region. The device open base breakdown voltage (BVCEO) of 270 V was much less than the open emitter breakdown voltage (BVCBO) of 1560 V due to the emitter leakage current multiplication from the high current gain by "transistor action" of BJTs. The device has shown minimal gain degradation after electrical stress at high current density of >200 A/cm(2) up to 25 h. (C) 2008 Elsevier Ltd. All rights reserved.