A CMOS-compatible gate-controlled lateral BJT (GC-LBJT) was prepared with a conventional 90 nm CMOS technology for radio frequency system-on-chip (RF SoC) applications. The emitter injection efficiency and the doping profile in P-well were optimized by properly controlling source. drain, and well implants. Consequently, the GC-LBJT with a gate length of 0.15 mu m can achieve a current gain over 2000 and 17/19 GHz for the f(T)/f(max), respectively, which are 1000%, 200%, and 60% improvements in current gain, f(T) and f(max), respectively as compared to the LBJT reported previously. (C) 2008 Elsevier Ltd. All rights reserved.