The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atomsz and self-interstitials. A complete implementation into TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce profile shape and dopant activation for a large variety of implant and annealing conditions. (C) 2008 Elsevier Ltd. All rights reserved.