In order to describe carrier transport in inversion layers we have developed a two-dimensional non-parabolic macroscopic transport model up to the sixth order. To model the transport parameters with as few simplifying assumptions as possible, we apply an extraction technique from Subband Monte Carlo simulations followed by an interpolation within these Monte Carlo tables through the whole inversion layer. Important effects like surface-roughness scattering as well as quantization are inherently considered in the Subband Monte Carlo data, which are used to model higher-order mobilities as well as the macroscopic relaxation times as a function of the effective field and the carrier temperature. The parameters are compared with the results obtained from models using bulk Monte Carlo data. where neither surface roughness nor quantization are considered. The models are applied to a UTB SOI-MOSFET and their predictions are discussed for different gate lengths. (C) 2008 Elsevier Ltd. All rights reserved.