Demonstration of the first SiC power integrated circuit

Sheng K; Zhang YX; Su M; Zhao JH; Li XQ; Alexandrov P; Fursin L

Solid-State Electronics, Vol.52, No.10, 1636-1646, 2008

DOI10.1016/j.sse.2008.06.037 Export Citation

Demonstration of the first SiC power integrated circuit

Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L

This paper will discuss the development of SiC lateral power junction field-effect transistors (JFETs) and ICs. Normally-off RESURF vertical-channel lateral power JFETs are fabricated and characterized. New results for the first demonstration of SiC Power ICs are presented and the potential for distributed DC-DC power converters at high frequencies is discussed. (c) 2008 Elsevier Ltd. All rights reserved.

Keywords:Silicon carbide;Normally off;Junction field-effect transistor (JFET);Power integrated circuits;High temperature electronics;RESURF