Organic semiconductor to metal Schottky contacts have been widely used in electronic devices and to investigate the properties of organic semiconductors. In designing and characterizing these devices the full depletion approximation is used. The analytical and numerical simulations presented in this paper suggest that this approximation is not generally valid. Simulations of a Schottky contact between regioregular-poly 3 hexylthiophene (rr-P3HT) and aluminum show that this approximation becomes worse as molecular order decreases, with the potential profile increasingly deviating from the expected quadratic function of position. Also the depletion width decreasing well below that predicted using the approximation. In this work the slope of the band tail is used as a measure of disorder. (C) 2008 Elsevier Ltd. All rights reserved.