We present a novel single-poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 mu m RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of +/- 6 V is applied for writing and erasing using uniform-channel Fowler-Nordheim tunnelling. Operations faster than 1 ms, endurance over 10(+3) cycles and data retention longer than 10 years are demonstrated. (C) 2009 Elsevier Ltd. All rights reserved.