The analytical modeling of electron mobility in wurtzite Gallium Nitride (GaN) requires several simplifying assumptions, generally necessary to lead to compact expressions of electron transport characteristics for GaN-based devices. Further progress in the development, design and optimization of GaN-based devices necessarily requires new theory and modeling tools in order to improve the accuracy and the computational time of devices simulators. Recently, the evolutionary techniques, genetic algorithms (GA) and particle swarm optimization (PSO). have attracted considerable attention among various heuristic optimization techniques. in this paper, a particle swarm optimizer is implemented and compared to a genetic algorithm for modeling and optimization of new closed electron mobility model for GaN-based devices design. The performance of both optimization techniques in term of computational time and convergence rate is also compared. Further, our obtained results for both techniques (PSO and GA) are tested and compared with numerical data (Monte Carlo simulations) where a good agreement has been found for wide range of temperature, doping and applied electric field. The developed analytical models can also be incorporated into the circuits simulators to study GaN-based devices without impact on the computational time and data storage. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.