This paper presents an experimental analysis of the noise measurements performed in germanium-on-insulator (GeOI) 0.12 mu m PMOS transistors from weak to strong inversion. The front gate stack is composed of a HfO2 material with a TiN metal gate (equivalent oxide thickness, EOT, of 1.8 nm). The buried oxide is used as a back gate for experimental purposes. Front gate and back gate oxides/Ge interfaces are characterized. The slow oxide trap densities of the two interfaces are extracted. The values obtained for the front gate oxide are N-t(E-Fn) = 1.2 x 10(18) cm(-3) eV(-1) and are comparable to values for nitrided oxides on Si bulk. The extracted Values for slow oxide trap densities of the BOx SiO2/Ge interface are between 6 and 8 x 10(17) cm(-3) eV(-1) and are close to those of state of art buried oxide SiO2/Si interfaces, These results are of importance for the future development of GeOI technologies. (C) 2009 Elsevier Ltd. All rights reserved.