A metallization scheme suitable to explore the capability of 4H-SiC for high temperature applications was designed and fabricated on Schottky barrier diodes (SBDs). The device electrical characteristics measured at room temperature were monitored over 1500 h cumulative annealing in air at 350 degrees C. Schottky barrier device parameters were stable over the annealing period. Good and stable adhesion properties of the protective metallization stack on SIC and on SiO2 were reported as a function of duration of annealing as well. It was observed that platinum layer that was sputter-deposited at 250 degrees C as part of the metallization stack improved the adhesion properties of the metallization remarkably. Published by Elsevier Ltd.