A facile double-film annealing approach has been developed to prepare fac-Alq(3) nano/microstructures (see figure) as well as a uniform thin film. More noteworthy is that this approach not only enables the synthesis of high-quality fac-Alq(3) nano-structures and thin films but also provides the possibility to evaluate the transporting nature of the fac-Alq(3) film. Current voltage characterization of the fac-Alq(3) film implies that fac-Alq(3) is a typical p-type semiconductor.