Thermal stability of sputter deposited ZnO thin films was evaluated by thermal desorption spectroscopy (TDS). Desorption of Zn was mainly observed from the films deposited at low O-2/Ar gas ratio and low RF power. In contrast, O-2 desorption was mainly observed from the films deposited at high O-2/Ar gas ratio and high RF power. The amount of desorbed O-2 from the film increased with increasing the O-2/Ar gas flow ratio and the RF power. Furthermore, the desorption temperature of O-2 increased with increasing the RF power during the deposition. Thermal stability of the ZnO films was controlled not only by the O-2/Ar gas flow ratio, but also applied RF power to the target. (C)2010 Elsevier B. V. All rights reserved.