The objective of this study is to investigate how the surface characteristics of indium phosphide (InP) can be modified through the use of atomic hydrogen (H-*) cleaning and silicon interfacial control layers (Si ICL), prior to the deposition of MgO dielectric layers. X-ray photoelectron spectroscopy (XPS) analysis shows that the InP native oxide can be successfully removed using atomic hydrogen cleaning at a substrate temperature of 300 degrees C. However, atomic force microscopy (AFM) images display evidence for the growth of metallic In island features after H-* cleaning, and subsequent deposition of MgO thin films on the H-* cleaned surface resulted in high levels of interfacial indium oxide growth. It has also been shown that the deposition of thin (similar to 1 nm) Si layers on InP native oxide surfaces results in the transfer of oxygen from the InP substrate to the Si ICL and the formation of Si-InP bonds. XPS analysis indicates that MgO deposition and subsequent 500 degrees C annealing results in further oxidation of the Si layer. However, no evidence for the re-growth of interfacial In or P oxide species was observed, in contrast to observations on the H-* cleaned surface. (C) 2010 Elsevier B.V. All rights reserved.