Microcrystalline silicon films without an amorphous incubation layer were deposited onto glass substrates at a high rate and a low temperature by a jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD) technique. It was observed that the amorphous incubation layer present at the beginning of the deposition gradually crystallized during the growth process, and an almost completely crystallized layer was obtained. The analysis indicates that high density plasma, spatial plasma potential, and high pressure are of substantive benefit to the generation of abundant energetic hydrogen atoms, which diffuse into the incubation layer and control the crystallization through a hydrogen-mediated chemical reaction.