Thin films of high dielectric constant (kappa similar to 68) rutile phase titanium dioxide (TiO2) were grown epitaxially on tin dioxide (SnO2) substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature (250 degrees C) was used with titanium(IV) tetrakis (isopropoxide) and hydrogen peroxide (H2O2) as precursors. The rutile TiO2 thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase SnO2 substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3457485] All rights reserved.