Cu2ZnSnS4 (CZTS) thin films were grown by a dc reactive magnetron sputtering technique and characterized by studying their composition, structural, optical, and electrical properties. Raman and X-ray diffraction analyses confirm the formation of quaternary Cu2ZnSnS4 phase with strong preferential orientation along the (112) plane and the presence of minor secondary phases Cu2-xS and Cu3SnS4. The grown CZTS film with a homogeneous morphology demonstrates an optical absorption coefficient of higher than 10(5) cm(-1) and an optical bandgap of 1.50 +/- 0.01 eV. All samples are p-type and exhibit high carrier concentration in the order of 10(18) cm(-3) and low carrier mobility. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3481764] All rights reserved.