This work presents an electrochemical etching technique for silicon (Si) surface texturing that simultaneously occurs during the liquid-phase deposition (LPD) of silicon dioxide (SiO2) on the surface. The method relies on an isotropic electropolish etching through self-defined micropores evolved in the LPD oxide mask, leading to a uniform texture, without requiring any patterning. Hydrofluorosilicic acid/ethanol electrolyte has been used in the etching process. Orientation-independent texturing was successfully realized on spherical Si single crystals for potential application in photovoltaics. The characteristics of Si surface texture and LPD SiO2 layer were investigated by energy-dispersive spectroscopy, scanning electron microscopy, atomic force microscopy, and Fourier transform IR. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491294] All rights reserved.