화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.12, No.1, 1-11, January, 1995
DOI10.1007/BF02697699  Export Citation
CHEMICAL VAPOR DEPOSITION OF ALUMINUM FOR ULSI APPLICATIONS
Rhee SW
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, reactions, plasma and photochemical reactions are also briefly described.
Keywords:Chemical Vapor Deposition (CVD) of Aluminum;Aluminum Thin Film;Selective Deposition;Metal Organic CVD
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