Multilayer TiO2-Ge thin films have been deposited using electron beam evaporation and resistive heating. The thickness of the TiO2 layers is 20 nm, while the thickness of the Ge layers varies from 2 to 20 nm with a step of 2 nm away from the substrate. These films were characterized by Studying their optical, electrical, and structural properties. The films were annealed at various temperatures tip to 500 degrees C for 2 h. The films are amorphous LIP to an annealing temperature of 400 degrees C, although Raman spectra suggest short-range ordering (and adjustments). The films annealed at 450 and 500 degrees C exhibit X-ray reflections of Ge and anatase TiO2. Illumination in sunlight increases the Conductivity of the as-deposited and annealed films. The band gal) Of the amorphous films changes from 1.27 to 1.41 eV up to 400 degrees C: the major contribution is possibly through direct transition. Two band gap regimes are clearly seen after 450 and 500 degrees C which have been assigned to an indirect band gap at about 1.2 eV and a direct band gap at about 1.8 eV. Conductivity of the multilayer films has been higher than that of pure Ge film. The conductivity increases with annealing temperature with abrupt increase at about 380 degrees C. The results imply that the TiO2-Ge multilayer films may be employed as heterojunctions with tunable band gap energy as related to quantum confinement effects. (c) 2009 Elsevier Inc. All rights reserved.