Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing (vol 311, pg 3273, 2009)

Zeng YH; Chen JH; Ma MY; Wang WY; Yang DR

Journal of Crystal Growth, Vol.312, No.5, 734-734, 2010

DOI10.1016/j.jcrysgro.2010.01.012 Export Citation

Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing (vol 311, pg 3273, 2009)

Zeng YH, Chen JH, Ma MY, Wang WY, Yang DR