Epitaxial and polycrystalline films of CdTe and ZnTe have been obtained on GaAs and Si substrates, by using isothermal close space sublimation. Contrary to previous experiments which were performed in a gas environment, in the present work the films were grown in vacuum. Due to this environment, transport of molecules from the source to the growing surface was significantly enhanced and larger growth rates were obtained. This is important for two reasons. First, it was possible to grow relatively thick films in a vacuum environment, without making an excessive number of cycles. Second, the films could be grown at lower temperatures than those required when using an inert gas environment with the subsequent advantage of decreasing inter-diffusion processes. (C) 2010 Elsevier B.V. All rights reserved.