A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 angstrom and c=15.90698 angstrom has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43 x 10(-4) lin(-2) m(-4)) and dislocation density (1.35 x 10(14) lin m(-2)) have been calculated using powder X-ray diffraction results. High resolution Xray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned. (C) 2010 Elsevier B.V. All rights reserved.