The anisotropic film properties of m-plane GaN deposited by metal organic vapour phase epitaxy (MOVPE) on LiAlO2 substrates are investigated. To study the development of layer properties during epitaxy, the total film thickness is varied between 0.2 and 1.7 mu m. A surface roughening is observed caused by the increased size of hillock-like features. Additionally, small steps which are perfectly aligned in (1 1 - 2 0) planes appear for samples with a thickness of similar to 0.5 mu m and above. Simultaneously, the X-ray rocking curve (XRC) full width at half maximum (FWHM) values become strongly dependent on incident X-ray beam direction beyond this critical thickness. Anisotropic in-plane compressive strain is initially present and gradually relaxes mainly in the [1 1 - 2 0] direction when growing thicker films. Low-temperature photoluminescence (PL) spectra are dominated by the GaN near-band-edge peak and show only weak signal related to basal plane stacking faults (BSF). The measured background electron concentration is reduced from similar to 10(20) to similar to 10(19) cm(-3) for film thicknesses of 0.2 mu m and similar to 1 mu m while the electron mobilities rise from similar to 20 to similar to 130 cm(2)/V s. The mobilities are significantly higher in [0 0 0 1] direction which we explain by the presence of extended planar defects in the prismatic plane. Such defects are assumed to be also the cause for the observed surface steps and anisotropic XRC broadening. (C) 2010 Elsevier B.V. All rights reserved.