The possibility of AlN growth using Li-Al-N solvent was investigated. Based on theoretical prediction, we selected Li3N as a suitable nitrogen source for AlN growth. First, vapor phase epitaxy using Li3N and Al as source materials was performed to confirm the following reaction on the growth surface: Li3N+Al=AlN+3Li. The results suggest that the reaction proceeds to form AlN on the substrate under appropriate conditions. Next, AlN growth using Li-Al-N solvent was carried out. The Li-Al-N solvent was prepared by annealing of mixtures composed of Li3N and Al. The results imply that AlN was formed under an Al-rich condition. Moreover, it was found that Li was swept out from AlN grains during growth. The results suggest that AlN growth using Li-Al-N solvent might be a key technology to obtain an AlN crystal boule. (C) 2010 Elsevier B.V. All rights reserved.