Large-area C> 1 cm(2)) freestanding translucent orthorhombic boron nitride (oBN) films have been synthesized by magnetron sputtering at a low radio-frequency power of 120W. The structural characterizations were performed by means of X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is demonstrated that oBN is a direct band gap semiconductor (E-g similar to 3.43 eV). Excited by ultraviolet laser (wavelength at 325 nm), the oBN films emit strong white light, which can be seen by the naked eyes in the dark. In the photoluminescence spectrum, besides the ultraviolet near-band-edge radiative recombination emission, there are three visible emission bands (centered at 400, 538, and 700 nm) arising from the defect-related deep-level centers of oBN, which are mixed to form the white light emission. The hardness and elastic modulus of oBN films are 11.5 and 94 GPa, respectively, examined by nanoindentation measurements. (C) 2010 Elsevier B.V. All rights reserved.