화학공학소재연구정보센터
Journal of Crystal Growth, Vol.313, No.1, 62-67, 2010
Effect of Eu2O3 doping on Ta2O5 crystal growth by the laser-heated pedestal technique
High energy band gap hosts doped with lanthanide ions are suitable for optical devices applications To study the potential of Ta2O5 as a host compound pure and Eu2O3-doped Ta2O5 crystal fibers were grown by the laser-heated pedestal growth technique in diameters ranging from 250 to 2600 pm and in lengths of up to 50 mm The axial temperature gradient at the solid/liquid interface of pure Ta2O5 fibers revealed a critical diameter of 2200 gm above which the fiber cracks X-ray diffraction measurements of the pure Ta2O5 single crystals showed a monoclinic symmetry and a growth direction of [1 (1) over bar 0] An analysis of the pulling rate as a function of the fiber diameter for Eu2O3-doped Ta2O5 fibers indicated a well defined region in which constitutional supercooling is absent Photoluminescence measurements of pure Ta2O5 crystals using excitation above the band gap (3 8 eV) were dominated by a broad unstructured green band that peaked at 500 nm Three Eu3+-related optical centers were identified in the doped samples with nominal concentrations exceeding 1 mol% Two of these centers were consistent with the ion in the monoclinic phase with different oxygen coordinations The third one was visible in the presence of the triclinic phase (C) 2010 Elsevier B V All rights reserved