We demonstrate electrical pumping of self-assembled InP/Ga0.51In0.49P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al0.98Ga0.02As layer allows wet thermal oxidation and implementation of a current restricting oxide aperture above the active region. The intended use of these InP-quantum dots in such a resonant-cavity-LED structure as a pulsed electrically driven single-photon emitter was confirmed by measuring the second order intensity correlation function g((2))(tau) with a Hanbury-Brown and Twiss type setup. The correlation measurements performed on a single quantum dot (approximate to 40K) show a clear antibunching behavior (g((2))(0) <0.24) up to 200 MHz as expected for a single-photon emitter. (C) 2010 Elsevier B.V. All rights reserved.