The communication describes our research on a technique of making electrical contacts to semi-insulating (Cd,Mn)Te crystals for radiation detector applications. Since the electrical contacts made by deposition of Au directly onto the (Cd,Mn)Te surface turned out to be unreproducible, and the contacts made by deposition of monocrystalline layers of heavily doped semiconductors were unpractical for applications, our investigations were focused on the amorphous contact layers. The amorphous layers of heavily doped ZnTe:Sb or CdTe:In were evaporated on the "epi-ready" surfaces of good-quality, high-resistivity (10(8)-10(10) Omega cm) single crystals of (Cd,Mn)Te. The evaporation was carried out in the medium-high vacuum of about 10(-7) Torr. For electrical connections the amorphous contact layers were covered by an evaporated Au top layer. We investigated, the effect of thickness of the amorphous layer on the functioning of the contact. At the moment 1 mu m thickness seems to be satisfactory. (C) 2011 Elsevier B.V. All rights reserved.