We present for the first time electroluminescence from InGaN quantum dots inside a monolithic nitride based cavity. The structure consists of a 40-fold bottom GaN/Al0.82In0.18N distributed Bragg reflector (DBR), a single InGaN quantum dot layer inside a 5 lambda n-type (bottom) and p-type (top) doped GaN cavity and a 10-fold GaN/Al0.82In0.18N top DBR. Structural properties have been investigated by scanning transmission electron microscopy. Optical reflectivity measurements are in good agreement with calculations which predict a peak reflectivity of 92% and a quality factor of 220. Electroluminescence shows a pronounced emission at the spectral position of the cavity mode near 500 nm. (C) 2010 Elsevier B.V. All rights reserved.