PREPARATION AND CHARACTERIZATION OF TiO<SUB>2</SUB> THIN FILMS BY PECVD ON Si SUBSTRATE

Lee IS; Kim JW; Youn CJ; Park SK; Hahn YB

Korean Journal of Chemical Engineering, Vol.13, No.5, 473-477, September, 1996

PREPARATION AND CHARACTERIZATION OF TiO₂ THIN FILMS BY PECVD ON Si SUBSTRATE

Lee IS, Kim JW, Youn CJ, Park SK, Hahn YB

Titanium oxide thin films were prepared on p-Si(100) substrate by plasma enhanced chemical vapor deposition using high purity titanium isopropoxide and oxygen. The deposition rate was little affected by oxygen flow rate, but significantly affected by RF power, substrate tem- perature, carrier gas flow rate, and chamber pressure. Morphology of the film became coarser with increasing deposition time and chamber pressure, and the film showed less uniformity at high deposition rates. It was also found that the overall deposition process is controlled by heterogeneous surface reaction below 200℃, but controlled by mass transfer of reactants at higher temperatures. TiO₂ films deposited at temperatures lower than 400℃ was amorphous, but showed the anatase crystalline structure upon 400℃ deposition. The dielectric constant was about 47 for the films post-treated by rapid-thermal annealing (RTA) at 800℃. The leakage current was about 2 X 10^-5 A/cm² for the films deposited at 400℃ and RTA-treated at 600℃. However, it was decreased to less than 3 X 10^-7 A/cm² for the film RTA-treated at 800℃.

Keywords:Titanium Oxide;Thin Films;PECVD;Deposition Rate;RTA;Leakage Current

[References]

Choi SJ, Lee YE, Cho HS, Kim HJ, Korean J. Mater. Res., 5, 3 (1995)
Frenck HJ, Kulisch W, Kuhr M, Kassing R, Thin Solid Films, 201, 327 (1991)
Fuyuki T, Matsunami H, Jpn. J. Appl. Phys., 25, 1288 (1986)
Ghoshtagore RN, Noreika AJ, J. Electrochem. Soc., 117, 1310 (1970)
Jeon BS, Lee JK, Park D, Shin SH, Korean J. Mater. Res., 4, 861 (1994)
Lee WG, Woo SI, Lim JC, Choi SH, Oh KH, Thin Solid Films, 215, 1 (1993)
Rausch N, Burte EP, J. Electrochem. Soc., 140, 145 (1993)
Siegering KL, Griffin GL, J. Electrochem. Soc., 137, 814 (1990)
Takahashi Y, Tsuda K, Sugiyama K, Minoura H, Makino D, Tsuiki M, J. Chem. Soc.-Faraday Trans., 77, 1051 (1981)
Takahashi Y, Suzuki H, Nasu M, J. Chem. Soc.-Faraday Trans., 81, 3117 (1985)
Williams LM, Hess DW, Thin Solid Films, 115, 13 (1984)
Won TK, Yoon SG, Kim HG, J. Electrochem. Soc., 139, 3284 (1993)

[Referenced By]

[1] Choi SJ, Lee YE, Cho HS, Kim HJ, Korean J. Mater. Res., 5, 3 (1995)

[2] Frenck HJ, Kulisch W, Kuhr M, Kassing R, Thin Solid Films, 201, 327 (1991)

[3] Fuyuki T, Matsunami H, Jpn. J. Appl. Phys., 25, 1288 (1986)

[4] Ghoshtagore RN, Noreika AJ, J. Electrochem. Soc., 117, 1310 (1970)

[5] Jeon BS, Lee JK, Park D, Shin SH, Korean J. Mater. Res., 4, 861 (1994)

[6] Lee WG, Woo SI, Lim JC, Choi SH, Oh KH, Thin Solid Films, 215, 1 (1993)

[7] Rausch N, Burte EP, J. Electrochem. Soc., 140, 145 (1993)

[8] Siegering KL, Griffin GL, J. Electrochem. Soc., 137, 814 (1990)

[9] Takahashi Y, Tsuda K, Sugiyama K, Minoura H, Makino D, Tsuiki M, J. Chem. Soc.-Faraday Trans., 77, 1051 (1981)

[10] Takahashi Y, Suzuki H, Nasu M, J. Chem. Soc.-Faraday Trans., 81, 3117 (1985)

[11] Williams LM, Hess DW, Thin Solid Films, 115, 13 (1984)

[12] Won TK, Yoon SG, Kim HG, J. Electrochem. Soc., 139, 3284 (1993)