Semiconductor catalyzed N-formylation of a variety of amines using formic acid as formylating agent has been investigated. Primary and secondary amines were found to react efficiently with formic acid in the presence of TiO2-P25 or sulfated titania giving N-formyl derivatives in high yields at room temperature. Sulfated titania is found to be more efficient and reusable than TiO2-P25 for N-formylation of amines. (C) 2010 Elsevier B.V. All rights reserved.