A near UV excitable phosphor Sr2.85Eu0.1Al0.9In0.1O4-alpha F1-delta was made by reducing as-made Sr2.85Eu0.1Al0.9In0.1O4F. This material reveals defect-induced broad-band photoluminescence emissions centered at 600 nm and a line emission at 619 nm due to the D-5(0) -> F-7(2) transition of the Eu activator (curve 1). Such combined line and broad-band emitters have the potential when combined with another broad-band emitting phosphor with emissions near 500 nm to create white light by converting near-UV light from a Ga1-xInxN light-emitting device.