Conformal atomic layer deposition of thin Sb2S3 layers takes place epitaxially on suitable substrates at 90 degrees C. More elevated deposition temperatures increase the mobility of the solid and result in the diffusion of Sb2S3 along surface energy gradients. On an Sb2Se3 wire that presents the high-energy c facet at its extremity, this results in the axial elongation of the wire with a Sb2S3 segment. When an Sb2S3 wire whose c planes are exposed on the sides is used as the substrate, the homoepitaxy collects material laterally and yields a nano-object with a rectangular cross section.