Germanium nanowires (GeNWs) were synthesized by low pressure chemical vapor deposition of hexamethyldigermane (GeMe3)(2) at 490 degrees C and a pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few micrometers in length were deposited onto substrates made of stainless steel, Fe, Mo, Ta, W, Si, and SiO2. The influence of surface pretreatment of the substrates (roughening of surface, grooves made by a diamond tip or Ge thermal evaporation) is discussed. GeNW deposits were studied using scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared, Raman spectroscopy, and energy-dispersive X-ray analyses. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3476288] All rights reserved.