Silane (SiH4) and dichlorosilane (DCS) are currently the precursors of choice for Silicon Vapor Phase Epitaxy at low temperatures (T < 1000 degrees C). But device innovation is pushing down process thermal budgets to the extent that it becomes apparent that in the near future poor Si growth rates will become a roadblock for high volume manufacturing. Therefore, new precursors that produce high growth rates at low deposition temperatures (< 650 degrees C) are needed for advanced epitaxial applications, such as recessed source/drain stressors, Metal Oxide Semiconductor (MOS) channels and elevated source/drain structures. The primary objective of this study is to investigate the suitability of monochlorosilane (MCS) for Si epitaxy. It appears that MCS fulfills all the basic criteria, i.e. successful epitaxial growth and selective epitaxy, controllable C and P alloying with Si, for its qualification as a Si precursor in high volume manufacturing. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3569106] All rights reserved.