Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth temperature and time, was investigated. High aspect ratio InSb nanowires, having a diameter of about 5-10 nm, were grown at 400 degrees C for 1 h on InSb (1 1 1) substrate onto which 60 nm Au particle was used as a metal catalyst. The synthesized InSb nanowires had zinc blend single crystal structure without any stacking faults, and they were covered with a thin (similar to 1 nm thick) amorphous layer. Electrical characterization of InSb nanowires was conducted utilizing a back-gated SNWFET. Device characterization demonstrated that NWs were n-type and exhibited a high I-on/I-off ratio of 10(6) and device resistance of 250 k Omega. (C) 2010 Elsevier B.V. All rights reserved.