Copper thin films were deposited on oxidized single crystal silicon and glass surfaces, at 70 degrees C and 150 degrees C substrate temperature using Electron Beam-Physical Vapor Deposition technique. The morphology and crystal orientation of the deposited film were investigated by SEM and XRD, respectively. Corrosion behavior of these films in hydrochloric acid was studied by potentiodynamic polarization method. Results showed that the corrosion resistance of CG 70 (deposit on glass at 70 degrees C substrate temperature) was higher than all deposits and than copper sheet because of its higher ability to form passive layer. (C) 2010 Elsevier B.V. All rights reserved.