Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels. To be as realistic as possible, the basic parameters are chosen to be those measured experimentally in state-of-the-art high-mobility materials, and where possible, predictions are compared against published data. Confinement effects are captured in the simulations using the density-gradient description of quantum transport. The emphasis is on projecting scaling properties and ultimate performance, with key issues being short-channel effects, the importance of source-drain leakage current, power considerations and p(+)-cap design. Although important, issues related to gate leakage current and gate stack design are not well addressed by modeling, and so are not considered in detail. With III-V complementary circuits and high-speed, low-power applications in mind, the general conclusion is that among the antimonide-based pFETs, InGaSb devices provide the best balance of speed and power dissipation. Published by Elsevier Ltd.