Wide bandgap semiconductor based metal oxide semiconductor field effect transistors (MOSFETs) with an embedded p-type body layer (i e without grounding p-type body) was theoretically analyzed In the GaN system the reverse bias current density at the off-state under applied 600 V at reverse bias region was negligibly as small as 2 03 x 10(-8) A/cm(2) even at the high temperature 600 K As a result the variation in the potential of p type layer was 0 26-0 52 V in the range of 300-600 K i e negligible compared with the built in voltage of the pn Junction (similar to 3 04-3 27 V approximate to bandgap energy in the range of 300-600 K) It is distinct consequence from cases of Si transistors where the potential variation and leakage current were significant This unique nature of wide bandgap material enables us to remove the contact to ground p layer which is beneficial in reducing device size and thus on resistance significantly (C) 2010 Elsevier Ltd All rights reserved