This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL) design using the standard BICMOS technique This MVL circuit is constructed by a voltage controlled negative differential resistance (NDR) circuit which is integrated by the standard Si-based metal-oxide semiconductor field-effect transistor (MOS) and SiGe based heterojunction bipolar transistor (HBT) There exists a two-peak current-voltage curve by connecting two integrated MOS-HBT-NDR elements in parallel as we suitably determine the width/length (Wit) of the MOS devices In particular each peak current can be effectively modulated by the corresponding controlled voltage Using this special characteristic we can obtain the three logic states with arbitrary sequence at the output (C) 2010 Elsevier Ltd All rights reserved