Robust memory cell cylinder capacitor with cross double patterning technology (cross DPI) was successfully developed for the first time Cross DPI was introduced to overcome overlay problems of conventional DPI During second patterning reticle is rotated by 90 degrees therefore pattern to pattern overlay in cross DIYT is not as critical as in conventional DPI Memory cell cylinder capacitor with cross DPI showed more rectangular shape without any physical failure and capacitance of cell capacitor with cross DPI is improved up to similar to 8% compared to capacitance of cell capacitor with single exposure technique (SET) (C) 2010 Elsevier Ltd All rights reserved