We demonstrated the operation of GaN-on-Si metal-oxide-semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO2/GaN were successfully improved by annealing at 800 degrees C for 30 min in N-2 ambient. The interface state density was less than 1 x 10(11) cm(-2) eV(-1) at E-c - 0.4 eV. The n(+) contact layers as the source and drain regions as well as the reduced surface field (RESURF) zone were formed using a Si ion implantation technique with the activation annealing at 1200 degrees C for 10 s in rapid thermal annealing (RTA). As a result, we achieved an over 1000 V and 30 mA operation on GaN-on-Si MOSFETs. The threshold voltage was +2.6 V. It was found that the breakdown voltage depended upon the RESURF length and nitride based epi-layer thickness. In addition, we discussed the comparison of each performance of GaN-on-Si with -sapphire devices. (C) 2010 Elsevier Ltd. All rights reserved.