Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors. (C) 2010 Elsevier Ltd. All rights reserved.