Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

Kasakawa T; Tabata H; Onodera R; Kojima H; Kimura M; Hara H; Inoue S

Solid-State Electronics, Vol.56, No.1, 207-210, 2011

DOI10.1016/j.sse.2010.11.013 Export Citation

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

Kasakawa T, Tabata H, Onodera R, Kojima H, Kimura M, Hara H, Inoue S

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed. (C) 2010 Elsevier Ltd. All rights reserved.

Keywords:Degradation evaluation;Poly-Si;Thin-film transistor (TFT);Reverse characteristic;Hot-carrier degradation