Fabrication of flexible transparent resistive random access memory (FT-ReRAM) which consists of Ga doped ZnO (GZO) film not only as a memory layer but also as electrodes on the large Poly Ethylene Naphthalate sheet was attained by introducing RF plasma assist DC magnetron sputtering method. The averaged transmittance in the visible region (400-800 nm) was 66%. The memory effect was studied by using conducting atomic force microscope. It was suggested that the increase of Joule heating and oxygen vacancy density enhances memory effect, which is consistent with the redox model which has been proposed as the switching mechanism for conventional ReRAM. Stable and repeatable bi-polar resistive switching by application of the low voltage less than 2 V and low current less than 100 mu A was confirmed in the FT-GZO-ReRAM. Reset switching, which is a switching from the low to the high resistance states, in GZO-ReRAM was confirmed to be smooth and continuous, which will enable a multilevel application. It was suggested that the smooth and continuous reset was brought about by Ga-doping. (C) 2010 Elsevier Ltd. All rights reserved.